超薄AAO膜移植
发表时间:2013-01-17 阅读次数:5107次

超薄AAO模板,可以移植到任何基底表面,作为掩膜用于刻蚀形成纳米孔阵列,或沉积掩膜形成纳米点阵列,实验室显微照片;纳米压印等。我们早在2005年就实现了有序超薄AAO膜的移植(G. Q. Ding, et al., Fabrication of Controllable Free-standing Ultrathin Porous Alumina Membranes, Nanotechnology 16 (2005) 1285).

 

基底选择:目前已经在Si,SiO2/Si,ITO,glass,Cu, HOPG等基底上实现。基底一般由客户准备和处理。高分子基底需要特殊处理,价格稍贵。

标准产品规格AAO-FS-01/02

孔径30纳米,孔间距65纳米,厚度200-400纳米,双通,面积大于等于1cm*1cm。

 

           

 

硫酸-上木科技-超薄AAO模板

 

标准产品规格AAO-FS-11/12/21/22

 孔径50-100纳米,孔间距100-110纳米,厚度200-400纳米,双通,面积大于等于1cm*1cm。

 

                                                                                       

 

应用案例

沉积硅纳米点阵列,图片来源于G. Q. Ding, M. J. Zheng, W. L. Xu, W. Z. Shen, Fabrication of Nanocrystalline Si:H Nanodot Arrays with Controllable Porous Alumina Membranes, Thin Solid Films 508 (2006) 182.

制备Ge纳米点阵列,图片来源于:

Yourui Huangfu, Wenbo Zhan, Xia Hong, Xu Fang, Guqiao Ding and Hui Ye, Optimal growth of Ge-rich islands on Si (001) substrates with hexagonal packed pit patterns, Nanotechnology, 24 (2013) 035302.

 

我们的优势,Our advantages:

Ø Controllabe nanopore diameter

Ø Adjustable pore depth

Ø Highly ordered

Ø Transfer onto arbitrary substrates

Ø Very short lead time

 

定制说明:

在2014年7月1日之前我们想广大客户提供过孔径200-400nm,厚度200-500nm,周期400-450nm的超薄AAO膜,但由于该产品工艺更加复杂困难,并且转移的稳定性和重现性有待提升。如果有需要请联系我门。

近期也将推出周期200-250nm,孔径100-200的超薄AAO膜,详情请联系我们。

 

参考文献

10. 电化学鼓泡剥离超薄AAO膜的方法,发明专利,2014年。 

9. Yourui Huangfu, Wenbo Zhan, Xia Hong, Xu Fang, Guqiao Ding and Hui Ye, Optimal growth of Ge-rich islands on Si (001) substrates with hexagonal packed pit patterns, Nanotechnology, 24 (2013) 035302.

8. Y. Y. Zhu, G. Q. Ding*, J. N. Ding, N. Y. Yuan, AFM、SEM and TEM Studies on Porous Anodic Alumina, Nanoscale Res. Lett. 5 (2010) 725-734.

7. G. Q. Ding, W. Z. Shen, M. J. Zheng, Z. B. Zhou, Indium Oxide “rods in dots” Nanostructures, Appl. Phys. Lett. 89 (2006) 063113.

6. G. Q. Ding, W. Z. Shen, M. J. Zheng, D. H. Fan, Synthesis of Ordered Large-scale ZnO Nanopore Arrays, Appl. Phys. Lett. 88 (2006) 103106. (Cited 41).

5. G. Q. Ding, W. Z. Shen, M. J. Zheng, Z. B. Zhou, Integration of Single-crystalline Nanocolumnars into Highly-ordered Nanopore arrays, Nanotechnology 17 (2006) 2590.

4. G. Q. Ding, M. J. Zheng, W. L. Xu, W. Z. Shen, Fabrication of Nanocrystalline Si:H Nanodot Arrays with Controllable Porous Alumina Membranes, Thin Solid Films 508 (2006) 182.

3. G. Q. Ding, M. J. Zheng, W. L. Xu, W. Z. Shen, Fabrication of Controllable Free-standing Ultrathin Porous Alumina Membranes, Nanotechnology 16 (2005) 1285. (Cited 56).

2. G. Q. Ding, W. Z. Shen, M. J. Zheng, W. L. Xu, Y. L. He, Q. X. Guo, Fabrication of Highly Ordered Nanocrystalline Si:H Nanodots for the Application of Nanodevice Arrays, J. Cryst. Growth 283 (2005) 339.

1. W. L. Xu, M. J. Zheng, G. Q. Ding, W. Z. Shen, Fabrication and Optical Properties of Highly Ordered ZnO Nanodot Arrays, Chem. Phys. Lett. 411 (2005) 37. (Cited 33).